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 TRANSISTOR MODULE
SQD300AA100
UL;E76102 M SQD300AA100 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. IC 300A, VCEX 1000V Low saturation voltage for higher efficiency. High DC current gain hFE Isolated mounting base Applications Moter Control VVVF , AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application
Unit A
Maximum Ratings
Symbol VCBO VCEX VEBO IC IC IB PT Tj Tstg VISO Item Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Reverse Collector Current Base Current Total power dissipation Junction Temperature Storage Temperature Isolation Voltage Mounting Torque Mass Mounting M6 Terminal M6 Terminal M4 A.C.1minute Recommended Value 2.5 3.9 25 40 Recommended Value 2.5 3.9 25 40 Recommended Value 1.0 1.4 10 14 Typical Value TC 25 40 VBE 2V Conditions Ratings SQD300AA100 1000 1000 7 300 300 16 2000 150 40 125 2500 4.7 48 4.7 48 1.5 15 520
Tj 25 Unit V V V A A A W
V Nm ( f B) g Tj 25
Electrical Characteristics
Symbol ICBO IEBO VCEX SUS hFE VCE VBE
sat sat
Item Collector Cut-off Current Emitter Cut-off Current Collector Emitter Sustaning Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage On Time Switching Time Storage Time Fall Time Collector-Emitter Reverse Voltage Thermal Impedance (junction to case) VCB 1000V VEB 7V Ic 60A IB2
Conditions
Ratings Min. Max. 2.0 800
Unit mA mA V
12A
1000 75 100 2.5 3.5 3.0 15.0 3.0 1.8 0.063 0.3
Ic 300A VCE 2.8V Ic 300A VCE 5V Ic 300A IB 6A Ic 300A IB 6A Vcc 600V Ic 300A 6A IB1 6A IB2 Ic 300A Transistor part Diode part
V V s V /W
ton ts tf VECO Rth j-c
47
SQD300AA100
48
TRANSISTOR MODULE
SQD300AA120
UL;E76102 M SQD300AA120 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. IC 300A, VCEX 1200V Low saturation voltage for higher efficiency. High DC current gain hFE Isolated mounting base Applications Moter Control VVVF , AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application
Unit A
Maximum Ratings
Symbol VCBO VCEX VEBO IC IC IB PT Tj Tstg VISO Item Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Reverse Collector Current Base Current Total power dissipation Junction Temperature Storage Temperature Isolation Voltage Mounting Torque Mass M6 Terminal M6 Terminal M4 A.C.1minute Recommended Value 2.5 3.9 25 40 Recommended Value 2.5 3.9 25 40 Recommended Value 1.0 1.4 10 14 Typical Value TC 25 40 VBE 2V Conditions Ratings SQD300AA120 1200 1200 10 300 300 16 2000 150 40 125 2500 4.7 48 4.7 48 1.5 15 470
Tj 25 Unit V V V A A A W
V Nm ( f B) g Tj 25
Electrical Characteristics
Symbol ICBO IEBO VCEX SUS hFE VCE VBE
sat sat
Item Collector Cut-off Current Emitter Cut-off Current Collector Emitter Sustaning Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage On Time Switching Time Storage Time Fall Time Collector-Emitter Reverse Voltage Thermal Impedance (junction to case) VCB 1200V VEB 10V Ic 60A IB2
Conditions
Ratings Min. Max. 4.0 1200
Unit mA mA V
12A
1200 75 3.0 3.5 3.0 15.0 3.0 1.8 0.063 0.3
Ic 300A VCE 5V Ic 300A IB 6A Ic 300A IB 6A Vcc 600V Ic 300A 6A IB1 6A IB2 Ic 300A Transistor part Dioe part
V V s V /W
ton ts tf VECO Rth j-c
49
SQD300AA120
50


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